||RFMD® Press Event at 2012 IMS in Montreal
by RFMDevices - 2013-05-25 10:52 - 5,988 views
RFMD hosted a Press Event at IMS in Montreal, June 19, 2012 and Norm Hilgendorf, President, Multi-Market Products Group, spoke to attendees about RFMD's product lines. Microwave Journal's Pat Hindle attended the event and share the video with their readers.
by RFMDevices - 2013-05-25 10:52 - 5,605 views
RFMD® is a global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD.
||AMI/AMR Smart Energy Transmit/Receive Front End Modules
by RFMDevices - 2013-05-25 10:51 - 3,944 views
The RF65x9 series of Transmit/Receive Modules integrate a complete solution in a single Front-End Module (FEM) for AMI/AMR and Smart Grid solutions. The FEMs integrate a PA, transmit (Tx) filtering, input and output switches, a Tx or receive (Rx) attenuation path, and an LNA with bypass mode. Single-ended input and output are included for optimized ease of use and implementation. The pin-out of the FEM enables users to implement additional filtering external to the module, if needed.
||SP3T Symmetric Switch
by RFMDevices - 2013-05-25 10:51 - 5,448 views
RFMD's new RFSW6131 is a GaAs pHEMT Single-Pole Three-Throw (SP3T) switch designed for use in Cellular, 3G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability, while also 3V and 5V positive logic compatible.
||4.9GHz to 5.85GHz 802.11a/n Front End Module
by RFMDevices - 2013-05-25 10:51 - 4,461 views
The RF5836 provides a complete integrated solution in a single Front End Module (FEM) for WiFi 802.11a/n systems. The ultra small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components. This simplifies the total front end solution by reducing the bill of materials, system footprint, and manufacturability cost. The RF5836 integrates a Power Amplifier (PA), Single Pole Double Throw switch (SP2T), and a power detector coupler for improved accuracy. The device is provided in a 3mmx3mmx0.5mm, 16-pin package. This module meets or exceeds the RF Front End needs of IEEE 802.11a/n WiFi RF systems.
||Analog Controlled Variable Gain Amplifier 400MHz to 2700MHz
by RFMDevices - 2013-05-25 10:50 - 4,299 views
RFMD's RFVA0016 is an integrated analog controlled variable gain amplifier for broadband applications with external matching to allow for configurations in different bands with a single module. It features exceptional linearity over a greater than 30dB gain control range. This variable gain amplifier is controlled by a single 0V to 3.3V positive supply voltage when mode pin is 0V or 5V to 0V positive supply voltage when mode pin is 5V. The RFVA0016 is packaged in a small 5.2mm x 5.2mm leadless laminate MCM which contains thermal vias for ultra-low thermal resistance. This module is external matched to 50Ω at each individual band.
||225MHz to 1215MHz, 9W GaN Wideband Power Amplifier
by RFMDevices - 2013-05-25 10:50 - 4,832 views
The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1006 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
||GaAs HBT 400MHz to 2700MHz Power Amplifier
by RFMDevices - 2013-05-25 10:49 - 5,380 views
The RFPA1012 is a GaAs HBT linear power amplifier specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high performance single-stage amplifier achieves ultra-high linearity over a broad frequency range. It also offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs.
||InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz
by RFMDevices - 2013-05-25 10:49 - 4,359 views
The RFPA2089 is a single-stage InGaP HBT power amplifier specifically designed for wireless infrastructure applications. It offers high-gain linear operation at a comparably low DC power making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms.
||5-Bit Serial-Controlled Digital Step Attenuators
by RFMDevices - 2013-05-25 10:49 - 4,841 views
RFMD's new RFSA2514/2524 5-bit digital step attenuators (DSAs) feature high linearity over their entire gain control range with excellent step accuracy in 0.5dB (RFSA2514) or 1dB (RFSA2524) steps. They are programmed via a serial mode control interface that is both 3V and 5V compatible. They also offer a rugged Class 1C HBM ESD rating via on-chip ESD circuitry. The MCM package is footprint-compatible with most 24-pin, 4mm x 4mm, QFN packages.