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RFMDevices > 3V LTE Linear PA Modules
Date: 2013-05-10 17:03Read: 4222





The parts in RFMD's new RF73xx series of high-power, high-efficiency linear power amplifiers are designed for use as the final amplification stage in 3V, 50Ω LTE mobile cellular equipment developed for E-UTRANLTE band operation. These parts are developed for 5MHz to 20MHz LTE channel bandwidths. Each has two digital control pins to select one of three power bias states to optimize performance and current drain at lower power levels. Each also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output, and is assembled in a 10-pin, 3mm x 3mm x 0.8mm module.

estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RF7303.aspx?DC=25

estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RF7317A.aspx?DC=25#t=­1

estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RF7320.aspx?DC=25#t=1

estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RF7321.aspx?DC=25#t=1

Total : 87 ( 1/9 Pages)
RF Fusion by RFMD
by RFMDevices - 2014-09-01 10:39 - 5,272 views
http://www.RFMD.com/rf-fusion/ RFMD's RF Fusion offers answers to unique challenges. Smartphones connect us to the people, places, and things we care about most. When creating these devices, manufacturers deal with increasingly complex RF issues, a multitude of form factors, a dramatic rise in demand for broadband data, and a perpetual number of frequency bands. These factors make global roaming and 4G and LTE a challenge. RFMD's (RFMD.com) RF Fusion offers answers to these challenges. This chip combines power amplification, cellular switching, and filtering into a single, integrated chip that's the size of a few grains of rice. This all-in-one chip also contains core transmit and receive RF functionality, between the transceiver and antenna. RF Fusion incorporates the newest technologies including: average power tracking, envelope tracking, and carrier aggregation. This chip also has minimized circuit board area requirements, while reducing routing complexity. RF Fusion maximizes performance with the newest RF technologies, global compatibility for today's phones and tablets -- all in the smallest sized chip on the market. RFMD's RF Fusion makes...
RF Fusion by RFMD
by RFMDevices - 2014-08-01 14:39 - 4,418 views
http://www.RFMD.com/rf-fusion/ RFMD's RF Fusion offers answers to unique challenges. Smartphones connect us to the people, places, and things we care about most. When creating these devices, manufacturers deal with increasingly complex RF issues, a multitude of form factors, a dramatic rise in demand for broadband data, and a perpetual number of frequency bands. These factors make global roaming and 4G and LTE a challenge. RFMD's (RFMD.com) RF Fusion offers answers to these challenges. This chip combines power amplification, cellular switching, and filtering into a single, integrated chip that's the size of a few grains of rice. This all-in-one chip also contains core transmit and receive RF functionality, between the transceiver and antenna. RF Fusion incorporates the newest technologies including: average power tracking, envelope tracking, and carrier aggregation. This chip also has minimized circuit board area requirements, while reducing routing complexity. RF Fusion maximizes performance with the newest RF technologies, global compatibility for today's phones and tablets -- all in the smallest sized chip on the market. RFMD's RF Fusion ma...
Broadband SPDT Switch
by RFMDevices - 2013-05-10 17:06 - 4,279 views
The RFSW1012 is a single-pole double-through (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the RFSW1012 makes it ideal for use in LTE, WCDMA, and CDMA applications. This switch is ideally suited for use in CATV and SATV applications. The RFSW1012 is packaged in a compact 2mm x 2mm x 0.55mm, 12-pin, QFN package. estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RFSW1012.aspx?DC=25
45MHz to 1003MHz GaAs/GaN Power Doubler Hybrid
by RFMDevices - 2013-05-10 17:05 - 3,574 views
The RFPD2940 is a hybrid power doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RFPD2940.aspx?DC=25
High-Power GaN HEMT Power Amplifiers
by RFMDevices - 2013-05-10 17:05 - 4,519 views
RFMD's new RFHA104x series of high-power GaN broadband power transistors (BPTs) are optimized for military communications, commercial wireless infrastructure, and general purpose applications. Using an advanced 65V high power density GaN semiconductor process optimized for high peak-to-average ratio applications, these high-performance amplifiers achieve high power with high efficiency and flat gain over a broad frequency range in a single amplifier design. Each is an input-matched GaN transistor packaged in an air cavity ceramic package providing excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized, matching networks external to the package that provide wideband gain and high efficiency, all in a single amplifier ideal for linear correction circuits. estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RFHA1042.aspx?DC=25
2.8V to 4.2V, 868 to 915MHz ISM Band Transmit/ Receive Module with Diversity Switch
by RFMDevices - 2013-05-10 17:05 - 3,667 views
The RFFM6901 is a single-chip front end module (FEM) for application in the 868 to 915MHz ISM Band. The RFFM6901 addresses the need for aggressive size reduction for typical portable equipment RF front end designs and greatly reduces the number of components outside of the core chipset thus minimizing the footprint and assembly cost of the overall solution. The RFFM6901 contains an integrated 1W PA, dual port diversity antenna switch, LNA with bypass mode, and matching components. The RFFM6901 is packaged in a 32-pin, 6.0mm x 6.0mm x 1.2mm over-molded laminate package. estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RFFM6901.aspx?DC=25
WiFi Front End Modules
by RFMDevices - 2013-05-10 17:04 - 4,191 views
RFMD's RFFM8xxx series provide complete integrated solutions in single front end modules (FEMs) for WiFi systems. The RFFM8202 and RFFM8204 are designed for IEEE802.11b/g/n systems and the RFFM8502 is designed for IEEE802.11a/n systems. The ultra-small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components. This simplifies the total front end solution by reducing the bill of materials, system footprint, and manufacturability cost. Each device is provided in a 2.5mm x 2.5mm x 0.45mm, 16-pin QFN package.
40MHz to 1003MHz GaAs/GaN Push Pull Module
by RFMDevices - 2013-05-10 17:04 - 3,637 views
The RFCM3080 GaN-based push-pull amplifier is ideally used to drive the GaN-based final stage power-doubler amplifier in 40MHz to 1003MHz CATV systems. RFCM3080 features 28dB gain at 1003MHz with excellent input and output return loss (-20dB typical); and low distortion levels of -68dBc CTB and -75dBc CSO. RFCM3080 comes in a miniature 11mm x 8.5mm multi-chip-module (MCM) surface mount package. estore.rfmd.com/RFMD_OnlineStore/Product­s/RFMD%20Parts/PID-P_RFCM3080.aspx?DC=25
3V LTE Linear PA Modules
by RFMDevices - 2013-05-10 17:03 - 4,222 views
The parts in RFMD's new RF73xx series of high-power, high-efficiency linear power amplifiers are designed for use as the final amplification stage in 3V, 50Ω LTE mobile cellular equipment developed for E-UTRANLTE band operation. These parts are developed for 5MHz to 20MHz LTE channel bandwidths. Each has two digital control pins to select one of three power bias states to optimize performance and current drain at lower power levels. Each also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output, and is assembled in a 10-pin, 3mm x 3mm x 0.8mm module. estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RF7303.aspx?DC=25 estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RF7317A.aspx?DC=25#t=­1 estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RF7320.aspx?DC=25#t=1 estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RF7321.aspx?DC=25#t=1
5MHz to 1000MHz, Push--Pull, High Linearity InGaP HBT Amplifier
by RFMDevices - 2013-05-10 17:03 - 3,883 views
RFMD's RFCA1008 is a high performance InGaP HBT MMIC amplifier designed with the InGaP process technology for excellent reliablility. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. A Darlington configuration is utilized for broadband performance. The RFCA1008 contains two amplifiers for use in wideband push-pull CATV amplifiers requiring excellent second order performance; the second and third order non-linearities are greatly improved in the push-pull configuration. estore.rfmd.com/RFMD_Onlinestore/Product­s/RFMD+Parts/PID-P_RFCA1008.aspx?DC=25

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